| Titre : | Epitaxy of semiconductors : introduction to physical principles | | Type de document : | texte imprimé | | Auteurs : | Pohl, Udo W, Auteur | | Editeur : | Berlin : Springer | | Année de publication : | 2013 | | Collection : | Graduate texts in physics | | Importance : | 325 p. | | Présentation : | ill.;couv.;schémas | | Format : | 24x16 cm. | | ISBN/ISSN/EAN : | 978-3-642-32969-2 | | Note générale : | index | | Langues : | Anglais (eng) | | Mots-clés : | Epitaxy Semiconductors. | | Résumé : | Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations. |
Epitaxy of semiconductors : introduction to physical principles [texte imprimé] / Pohl, Udo W, Auteur . - Berlin : Springer, 2013 . - 325 p. : ill.;couv.;schémas ; 24x16 cm.. - ( Graduate texts in physics) . ISBN : 978-3-642-32969-2 index Langues : Anglais ( eng) | Mots-clés : | Epitaxy Semiconductors. | | Résumé : | Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations. |
|  |
Affiner la rechercheEpitaxy of semiconductors / Pohl, Udo W
